Specification	SIHG47N60AE-GE3

Current - Continuous Drain (Id) (Tc)	43 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	182 nC
Input Capacitance (Ciss) (Max)	3600 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	313 W
Rds On (Max)	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHG47 Series

Part	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Technology	Package / Case	Power Dissipation (Max)	Rds On (Max)	Mounting Type	Vgs(th) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay Dale SIHG47N60AE-GE3	TO-247AC	-55 °C	150 °C	3600 pF	MOSFET (Metal Oxide)	TO-247-3	313 W	65 mOhm	Through Hole	4 V	182 nC	43 A	N-Channel	10 V	600 V	30 V
Vishay Dale SIHG47N60EF-GE3	TO-247AC	-55 °C	150 °C	4854 pF	MOSFET (Metal Oxide)	TO-247-3	379 W	67 mOhm	Through Hole	4 V	225 nC	47 A	N-Channel	10 V	600 V	30 V
Vishay Dale SIHG47N60E-E3	TO-247AC	-55 °C	150 °C	9620 pF	MOSFET (Metal Oxide)	TO-247-3	357 W	64 mOhm	Through Hole	4 V	220 nC	47 A	N-Channel	10 V	600 V	30 V
Vishay Dale SIHG47N65E-GE3	TO-247AC	-55 °C	150 °C	5682 pF	MOSFET (Metal Oxide)	TO-247-3	417 W	72 mOhm	Through Hole	4 V	273 nC 273 nC	47 A	N-Channel	10 V	650 V	30 V

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