Specification	SSM6J808R,LXHF

Current - Continuous Drain (Id) (Ta)	7 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	24.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1020 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power Dissipation (Max)	1.5 W
Qualification	AEC-Q101
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-20 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	2 V

SSM6J808R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -40 V, -7 A, 0.035 Ω@10V, TSOP6F

Part	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Rds On (Max)	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Qualification	Gate Charge (Max)	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Grade
Toshiba Semiconductor and Storage SSM6J808R,LF	40 V	6-SMD Flat Leads	MOSFET (Metal Oxide)	-20 V	10 V	7 A	2 V	35 mOhm	6-TSOP-F	1020 pF	1.5 W	P-Channel	AEC-Q101	24.2 nC	Surface Mount	150 °C	4 V	10 V	Automotive
Toshiba Semiconductor and Storage SSM6J808R,LXHF	40 V	6-SMD Flat Leads	MOSFET (Metal Oxide)	-20 V	10 V	7 A	2 V	35 mOhm	6-TSOP-F	1020 pF	1.5 W	P-Channel	AEC-Q101	24.2 nC	Surface Mount	150 °C	4 V	10 V	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources