APT50GT120B2RDLG

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Microsemi Corporation

IGBT NPT 1200V 106A

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Microsemi Corporation

IGBT NPT 1200V 106A

Technical Specifications

Parameters and characteristics for this part

Specification	APT50GT120B2RDLG

Current - Collector (Ic) (Max)	106 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	240 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	694 W
Switching Energy	3585 µJ, 1910 µJ
Td (on/off) @ 25°C	23 ns, 215 ns
Test Condition	800 V, 4.7 Ohm, 15 V, 50 A
Vce(on) (Max) @ Vge, Ic	3.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Test Condition	Current - Collector Pulsed (Icm)	IGBT Type	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max)
Microsemi Corporation APT50GT120B2RDLG	Through Hole	-55 °C	150 °C	1910 µJ 3585 µJ	694 W	1200 V	TO-247-3 Variant	4.7 Ohm 15 V 50 A 800 V	150 A	NPT	23 ns 215 ns	240 nC	3.7 V	106 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 13.43

General part information

IGBT NPT 1200 V 106 A 694 W Through Hole

Technical documentation and resources

No documents available