Description
General part information
IHW50N65 Series
TheReverse Conducting R5 650 V, 50 A RC-H5IGBTswith monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications. With a monolithically integrated diode, the 650 V RC-H5 IGBTs are perfectly suited for soft switching applications such asinduction cookingstoves andinverterized microwaveovens. The RC-H5 IGBT complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability.
Technical Specifications
Parameters and characteristics for this part
| Specification | IHW50N65R5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 230 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3 |
| Power - Max | 282 W |
| Reverse Recovery Time (trr) | 95 ns |
| Switching Energy (Off) | 180 µJ |
| Switching Energy (On) | 740 µJ |
| Td (off) @ 25°C | 220 ns |
| Td (on) @ 25°C | 26 ns |
| Test Condition Current | 25 A |
| Test Condition Resistance | 8 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part