Specification	SQJ211ELP-T1_GE3

Current - Continuous Drain (Id) (Tc)	33.6 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Max)	68 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQJ211 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	FET Type	Grade	Vgs(th) (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max)	Qualification
Vishay Dale SQJ211ELP-T1_GE3	-55 °C	175 °C	20 V	68 W	Surface Mount	68 nC	PowerPAK® SO-8	100 V	33.6 A	30 mOhm	P-Channel	Automotive	2.5 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	3800 pF	AEC-Q101

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