IXFV96N15P

Obsolete

IXYS

MOSFET N-CH 150V 96A PLUS220

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Obsolete

IXYS

MOSFET N-CH 150V 96A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV96N15P

Current - Continuous Drain (Id) @ 25°C	96 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
IXYS IXFV96N15P	PLUS220	10 V	20 V	Through Hole	MOSFET (Metal Oxide)	3500 pF	-55 °C	175 ░C	N-Channel	480 W	24 mOhm	TO-220-3 Short Tab	150 V	96 A	110 nC	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 96A (Tc) 480W (Tc) Through Hole PLUS220

Technical documentation and resources

No documents available