Specification	SI4101DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	25.7 A, 25.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	203 nC
Input Capacitance (Ciss) (Max)	8190 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	6 W
Rds On (Max)	6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SI4101 Series

Part	Current - Continuous Drain (Id) (Tc)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Package Length	Package Width	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology
Vishay Dale SI4101DY-T1-GE3	25.7 A 25.7 A	8-SOIC	10 V	4.5 V	2.5 V	20 V	8190 pF	203 nC	6 W	0.154 in	3.9 mm	P-Channel	6 mOhm	30 V	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)

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