Specification	SIR5802DP-T1-BE3

Current - Continuous Drain (Id) (Ta)	33.6 A
Current - Continuous Drain (Id) (Tc)	137.5 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	3020 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	2.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIR5802DP Series

Part	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Technology	Rds On (Max)	Vgs (Max)	FET Type	Power Dissipation (Max)	Package Name	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)
Vishay Dale SIR5802DP-T1-BE3	PowerPAK® SO-8	10 V	7.5 V	Surface Mount	MOSFET (Metal Oxide)	2.9 mOhm	20 V	N-Channel	6.25 W 104 W	PowerPAK® SO-8	60 nC	-55 °C	150 °C	80 V	137.5 A	33.6 A	4 V	3020 pF

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