Specification	SIRA26DP-T1-RE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	2247 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	43.1 W
Rds On (Max)	2.65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-12 V
Vgs (Max) Positive	16 V
Vgs(th) (Max)	2.5 V

SIRA26 Series

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type	Mounting Type	Power Dissipation (Max)	Package Name	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Tc)	Package / Case	Rds On (Max)	Technology
Vishay Dale SIRA26DP-T1-RE3	25 V	10 V	4.5 V	2247 pF	44 nC 44 nC	N-Channel	Surface Mount	43.1 W	PowerPAK® SO-8	2.5 V	-55 °C	150 °C	-12 V	16 V	60 A	PowerPAK® SO-8	2.65 mOhm	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available