Specification	IXFC26N50

Current - Continuous Drain (Id) (Tc)	23 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	135 nC, 135 nC
Input Capacitance (Ciss) (Max)	4200 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	ISOPLUS220™
Package Name	ISOPLUS220™
Power Dissipation (Max)	230 W
Rds On (Max)	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXFC26N50 Series

Part	Current - Continuous Drain (Id) (Tc)	Technology	Drain to Source Voltage (Vdss)	Package Name	Input Capacitance (Ciss) (Max)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Gate Charge (Max)	Vgs (Max)	Package / Case	Power Dissipation (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)
LITTELFUSE IXFC26N50P	15 A	MOSFET (Metal Oxide)	500 V	ISOPLUS220™	3600 pF	Through Hole	260 mOhm	5.5 V	65 nC 65 nC	30 V	ISOPLUS220™	130 W	N-Channel	-55 °C	150 °C	10 V
LITTELFUSE IXFC26N50	23 A	MOSFET (Metal Oxide)	500 V	ISOPLUS220™	4200 pF	Through Hole	200 mOhm	4 V	135 nC 135 nC	20 V	ISOPLUS220™	230 W	N-Channel	-55 °C	150 °C	10 V

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