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SOT669

BUK7Y1R0-40NX

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Nexperia USA Inc.

N-CHANNEL 40 V, 0.97 MOHM, STANDARD LEVEL MOSFET IN LFPAK56

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SOT669

BUK7Y1R0-40NX

Active
Nexperia USA Inc.

N-CHANNEL 40 V, 0.97 MOHM, STANDARD LEVEL MOSFET IN LFPAK56

Find alt

Description

General part information

BUK7Y1R0-40N Series

Automotive qualified N-channel MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7Y1R0-40NX
Current - Continuous Drain (Id) (Tc)320 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)189 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)10622 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)268 W
QualificationAEC-Q101
Rds On (Max)0.97 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.6 V

Pricing

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CAD

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