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STP9NK60Z - TO-220-3

STP9NK60Z

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STMicroelectronics

N-CHANNEL 600 V, 0.85 OHM TYP., 7 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet+16
STP9NK60Z - TO-220-3

STP9NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 0.85 OHM TYP., 7 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP9NK60Z
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC
Input Capacitance (Ciss) (Max) @ Vds1110 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.93
50$ 1.55
100$ 1.27
500$ 1.15

Description

General part information

STP9NK60ZFP Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.