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SIR170DP-T1-RE3

SIR170DP-T1-RE3

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Vishay Dale

MOSFET N-CH 100V 23.2A/95A PPAK

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SIR170DP-T1-RE3

SIR170DP-T1-RE3

Active
Vishay Dale

MOSFET N-CH 100V 23.2A/95A PPAK

Find alt

Description

General part information

SIR170 Series

N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR170DP-T1-RE3
Current - Continuous Drain (Id) (Ta)23.2 A
Current - Continuous Drain (Id) (Tc)95 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)140 nC
Input Capacitance (Ciss) (Max)6195 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)104 W, 6.25 W
Rds On (Max)4.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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