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PSMN2R0-55YLHX

PSMN2R0-55YLHX

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Nexperia USA Inc.

N-CHANNEL 55 V, 2.1 MOHM, 200 A CONTINUOUS, LOGIC LEVEL APPLICATION SPECIFIC MOSFET IN LFPAK56E

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PSMN2R0-55YLHX

PSMN2R0-55YLHX

Active
Nexperia USA Inc.

N-CHANNEL 55 V, 2.1 MOHM, 200 A CONTINUOUS, LOGIC LEVEL APPLICATION SPECIFIC MOSFET IN LFPAK56E

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Description

General part information

PSMN2R0-55YLH Series

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R0-55YLHX
Current - Continuous Drain (Id) (Tc)200 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)184 nC
Input Capacitance (Ciss) (Max)11353 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case4-LFPAK, SOT-1023
Package NameLFPAK56, Power-SO8
Power Dissipation (Max)333 W
Rds On (Max)2.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.2 V

Pricing

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CAD

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