DF80R12W2H3FB11BPSA1

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Infineon Technologies

THE DF80R12W2H3F_B11 IS A BOOSTER IGBT HIGHSPEED 3 MODULE IN A EASYPACK™ 2B HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 80 A.

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Infineon Technologies

THE DF80R12W2H3F_B11 IS A BOOSTER IGBT HIGHSPEED 3 MODULE IN A EASYPACK™ 2B HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 80 A.

Technical Specifications

Parameters and characteristics for this part

Specification	DF80R12W2H3FB11BPSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max)	20 A
Current - Collector Cutoff (Max) [Max]	1 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	2.35 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	20 mW
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	NTC Thermistor	Input Capacitance (Cies) @ Vce	Configuration	Power - Max [Max]	Input	IGBT Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Package / Case	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies DF80R12W2H3FB11BPSA1		2.35 nF	Half Bridge	20 mW	Standard	Trench Field Stop	1 mA	Module	Chassis Mount	Module	1.7 V	20 A	150 °C	-40 °C	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 49.42
Digikey	Tray	1	$ 70.62
Newark	Each	1	$ 93.36
		5	$ 87.88
		10	$ 82.40
		30	$ 76.92

General part information

EasyPACK™2B 1200 V, 160 A chopperIGBT modulewithCoolSiC™ Schottky diode 1200V, PressFIT technology and High Speed IGBT H3.

Technical documentation and resources