IXFP5N50P3

Obsolete

IXYS

MOSFET N-CH 500V 5A TO220AB

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 500V 5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP5N50P3

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	1.65 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Technology	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
IXYS IXFP5N50P3	MOSFET (Metal Oxide)	TO-220-3	TO-220-3	5 A	370 pF	N-Channel	114 W	Through Hole	-55 °C	150 °C	1.65 Ohm	500 V	10 V	6.9 nC	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 5A (Tc) 114W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available