Specification	FF55MR12W1M1HB11BPSA1

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Tj)	15 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	45 nC
Input Capacitance (Ciss) (Max)	1350 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Rds On (Max)	52.9 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	5.15 V

FF55MR12 Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Channel Count	Configuration - Features	Configuration	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id)	Rds On (Max)	Technology	Mounting Type	Power - Max	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tj)
INFINEON FF55MR12W1M1HB70BPSA1	45 nC	1350 pF	Module	2	Half Bridge	N-Channel	-40 °C	150 °C	1200 V	15 A	52.9 mOhm	Silicon Carbide (SiC)	Chassis Mount	20 mW	5.15 V
INFINEON FF55MR12W1M1HB11BPSA1	45 nC	1350 pF	Module	2	Half Bridge	N-Channel	-40 °C	175 °C	1200 V		52.9 mOhm	Silicon Carbide (SiC)	Chassis Mount		5.15 V	15 A

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