Specification	IXTU01N80

Current - Continuous Drain (Id) (Tc)	100 mA
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	8 nC
Input Capacitance (Ciss) (Max)	60 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251AA
Power Dissipation (Max)	25 W
Rds On (Max)	50 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXTU01 Series

Part	Package Name	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs(th) (Max)	Rds On (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package / Case	Technology	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	FET Feature
LITTELFUSE IXTU01N80	TO-251AA	8 nC	-55 °C	150 °C	Through Hole	4.5 V	50 Ohm	N-Channel	800 V	20 V	60 pF	25 W	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	100 mA	10 V
LITTELFUSE IXTU01N100	TO-251AA	6.9 nC	-55 °C	150 °C	Through Hole	4.5 V	80 Ohm	N-Channel	1000 V	20 V	54 pF	25 W	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	100 mA	10 V
LITTELFUSE IXTU01N100D	TO-251AA	5.8 nC 5.8 nC	-55 °C	150 °C	Through Hole	4.5 V	80 Ohm	Depletion Mode N-Channel	1000 V	20 V	100 pF	1.1 W 25 W	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	400 mA	0 V	Depletion Mode

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources

No documents available