Specification	SI1065X-T1-GE3

Current - Continuous Drain (Id) (Ta)	1.18 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	10.8 nC
Input Capacitance (Ciss) (Max)	480 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	156 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

SI1065 Series

Part	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)	Technology	Package / Case	Rds On (Max)	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)
Vishay Dale SI1065X-T1-GE3	1.18 A	-55 °C	150 °C	Surface Mount	236 mW	MOSFET (Metal Oxide)	SOT-563 SOT-666	156 mOhm	8 V	SC-89 (SOT-563F)	12 V	P-Channel	950 mV	480 pF	4.5 V	1.8 V	10.8 nC

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