Specification	2N7002L6327HTSA1

Current - Continuous Drain (Id) (Ta)	300 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.6 nC
Input Capacitance (Ciss) (Max)	20 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	PG-SOT23-PO
Power Dissipation (Max)	500 mW
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

2N7002 Series

Part	Drain to Source Voltage (Vdss)	Power - Max	Current - Continuous Drain (Id)	FET Feature	Technology	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Mounting Type	Package Name	Channel Count	Configuration	Configuration - Features	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Current - Continuous Drain (Id) (Ta)	Vgs (Max)
INFINEON 2N7002DWH6327XTSA1	60 V	0.5 W	300 mA	Logic Level Gate	MOSFET (Metal Oxide)	20 pF	2.5 V	Surface Mount	PG-SOT363-PO	2	N-Channel	Dual	6-VSSOP SC-88 SOT-363	-55 °C	150 °C	0.6 nC	3 Ohm
INFINEON 2N7002L6327HTSA1	60 V				MOSFET (Metal Oxide)	20 pF	2.5 V	Surface Mount	PG-SOT23-PO				SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	0.6 nC	3 Ohm	500 mW	10 V	4.5 V	N-Channel	300 mA	20 V

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