G06NP06S2

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Goford Semiconductor

MOSFET N/P-CH 60V 6A 8SOP

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Goford Semiconductor

MOSFET N/P-CH 60V 6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G06NP06S2

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	25 nC
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF, 2610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	2 W
Power - Max	2.5 W
Rds On (Max) @ Id, Vgs	45 mOhm, 35 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V, 3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Power - Max	Power - Max	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs
Goford Semiconductor G06NP06S2	1350 pF 2610 pF	N and P-Channel	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	2 W	2.5 W	Surface Mount	35 mOhm 45 mOhm	-55 °C	150 °C	60 V	6 A	8-SOP	2.5 V 3.5 V	25 nC	22 nC

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General part information

Mosfet Array 60V 6A (Tc) 2W (Tc), 2.5W (Tc) Surface Mount 8-SOP

Technical documentation and resources