Specification	IRF510L

Current - Continuous Drain (Id) (Tc)	5.6 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Max)	8.3 nC
Input Capacitance (Ciss) (Max)	180 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	TO-262-3
Rds On (Max)	540 mOhm, 540 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	4 V

IRF510 Series

Part	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Mounting Type	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Rds On (Max)	FET Type	Package / Case
Vishay Dale IRF510STRR	TO-263 (D2PAK)	100 V	5.6 A	-55 °C	175 °C	MOSFET (Metal Oxide)	Surface Mount	8.3 nC	10 V	180 pF	20 V	3.7 W 43 W	4 V	540 mOhm 540 mOhm	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay Dale IRF510PBF-BE3	TO-220AB	100 V	5.6 A	-55 °C	175 °C	MOSFET (Metal Oxide)	Through Hole	8.3 nC		180 pF	20 V	43 W	4 V	540 mOhm 540 mOhm	N-Channel	TO-220-3
Vishay Dale IRF510L	TO-262-3	100 V	5.6 A	-55 °C	175 °C	MOSFET (Metal Oxide)	Through Hole	8.3 nC		180 pF			4 V	540 mOhm 540 mOhm	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA
Vishay Dale IRF510STRRPBF	TO-263 (D2PAK)	100 V	5.6 A	-55 °C	175 °C	MOSFET (Metal Oxide)	Surface Mount	8.3 nC	10 V	180 pF	20 V	3.7 W 43 W	4 V	540 mOhm 540 mOhm	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay Dale IRF510STRLPBF	TO-263 (D2PAK)	100 V	5.6 A	-55 °C	175 °C	MOSFET (Metal Oxide)	Surface Mount	8.3 nC	10 V	180 pF	20 V	43 W	4 V	540 mOhm 540 mOhm	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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