IRLHS6376TR2PBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 3.6A PQFN

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 3.6A PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRLHS6376TR2PBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	6-PQFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Mounting Type	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	FET Feature	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRLHS6376TR2PBF	Surface Mount	1.5 W	6-PQFN (2x2)	1.1 V	MOSFET (Metal Oxide)	3.6 A	Logic Level Gate	2 N-Channel (Dual)	270 pF	6-VDFN Exposed Pad	30 V	63 mOhm	2.8 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 3.6A 1.5W Surface Mount 6-PQFN (2x2)

Technical documentation and resources