CY7C10612G30-10ZSXI

Active

INFINEON

SRAM CHIP ASYNC SINGLE 3.3V 16M-BIT 1M X 16 10NS 54-PIN TSOP-II TRAY

Find alt

Alpha

CY7C10612G30-10ZSXI

Active

INFINEON

SRAM CHIP ASYNC SINGLE 3.3V 16M-BIT 1M X 16 10NS 54-PIN TSOP-II TRAY

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

CY7C10612 Series

CY7C10612G30-10ZSXI is a high performance CMOS fast static RAM device with embedded ECC. The device includes an error indication pin that signals an error detection and correction event during a read cycle. To write to the device, take chip enables (active-low CE) and write enable (active-low WE) input LOW. To read from the device, take chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), the active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW).

Technical Specifications

Parameters and characteristics for this part

Specification	CY7C10612G30-10ZSXI

Access Time	10 ns
Memory Depth	1 M
Memory Format	SRAM
Memory Interface (Type)	Parallel
Memory Size	16 Mb
Memory Type	Volatile
Memory Width	16 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	10.16 mm
Package Name	54-TSOP II, 54-TSOP
Package Width	10.16 mm
Technology	SRAM - Asynchronous
Voltage - Supply (Maximum)	3.6 V
Voltage - Supply (Minimum)	3 V
Write Cycle Time - Page	10 ns
Write Cycle Time - Word	10 ns

CY7C10612 Series

Part	Write Cycle Time - Word	Write Cycle Time - Page	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Memory Size	Operating Temperature (Max)	Operating Temperature (Min)	Package Name	Memory Format	Memory Type	Memory Interface (Type)	Package Length	Package Width	Mounting Type	Access Time	Memory Depth	Memory Width	Technology
INFINEON CY7C10612GE30-10ZSXIT	10 ns	10 ns	3.6 V	3 V	16 Mb	85 °C	-40 °C	54-TSOP 54-TSOP II	SRAM	Volatile	Parallel	10.16 mm	10.16 mm	Surface Mount	10 ns	1 M	16 bit	SRAM - Asynchronous
INFINEON CY7C10612GE30-10ZSXI	10 ns	10 ns	3.6 V	3 V	16 Mb	85 °C	-40 °C	54-TSOP 54-TSOP II	SRAM	Volatile	Parallel	10.16 mm	10.16 mm	Surface Mount	10 ns	1 M	16 bit	SRAM - Asynchronous
INFINEON CY7C10612G30-10ZSXI	10 ns	10 ns	3.6 V	3 V	16 Mb	85 °C	-40 °C	54-TSOP 54-TSOP II	SRAM	Volatile	Parallel	10.16 mm	10.16 mm	Surface Mount	10 ns	1 M	16 bit	SRAM - Asynchronous
INFINEON CY7C10612DV33-10ZSXI	10 ns	10 ns	3.6 V	3 V	16 Mb	85 °C	-40 °C	54-TSOP 54-TSOP II	SRAM	Volatile	Parallel	10.16 mm	10.16 mm	Surface Mount	10 ns	1 M	16 bit	SRAM - Asynchronous
INFINEON CY7C10612DV33-10ZSXI	10 ns	10 ns	3.6 V	3 V	16 Mb	85 °C	-40 °C	54-TSOP 54-TSOP II	SRAM	Volatile	Parallel	10.16 mm	10.16 mm	Surface Mount	10 ns	1 M	16 bit	SRAM - Asynchronous

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

CY7C10612G30-10ZSXI | Datasheet

Datasheet