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Jan2N1486

Jan2N1486

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Microchip Technology

BIPOLAR TRANSISTORS - BJT 55V 3A 1.75W NPN POWER BJT THT

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Jan2N1486

Jan2N1486

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT 55V 3A 1.75W NPN POWER BJT THT

Find alt

Description

General part information

JAN2N1486-Transistor Series

This family of 2N1483 through 2N1486 epitaxial planar NPN transistors operate at a high-frequency, with low saturation voltage and military qualified to the JANTX Level for high-reliability applications. These transistors are available in a standard TO-233AA (TO-8) package.

Technical Specifications

Parameters and characteristics for this part

SpecificationJan2N1486
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)15 µA
DC Current Gain (hFE) (Min)35
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-233AA, TO-8-3 Metal Can
Package NameTO-8
Power - Max1.75 W
QualificationMIL-PRF-19500, 207
Transistor TypeNPN
Vce Saturation (Max)750 mV, 750 mV
Voltage - Collector Emitter Breakdown (Max)55 V

Pricing

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