
Jan2N1486
ActiveBIPOLAR TRANSISTORS - BJT 55V 3A 1.75W NPN POWER BJT THT

Jan2N1486
ActiveBIPOLAR TRANSISTORS - BJT 55V 3A 1.75W NPN POWER BJT THT
Description
General part information
JAN2N1486-Transistor Series
This family of 2N1483 through 2N1486 epitaxial planar NPN transistors operate at a high-frequency, with low saturation voltage and military qualified to the JANTX Level for high-reliability applications. These transistors are available in a standard TO-233AA (TO-8) package.
Technical Specifications
Parameters and characteristics for this part
| Specification | Jan2N1486 |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 15 µA |
| DC Current Gain (hFE) (Min) | 35 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-233AA, TO-8-3 Metal Can |
| Package Name | TO-8 |
| Power - Max | 1.75 W |
| Qualification | MIL-PRF-19500, 207 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 750 mV, 750 mV |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
Pricing
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CAD
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Documents
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