Specification	SI7454DP-T1-E3

Current - Continuous Drain (Id) (Ta)	5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	34 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI7454 Series

Part	Rds On (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI7454DDP-T1-GE3	33 mOhm	N-Channel	100 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	150 °C	21 A	Surface Mount	PowerPAK® SO-8	10 V	4.5 V	4.1 W 29.7 W	19.5 nC	3 V	550 pF	20 V
Vishay Dale SI7454DP-T1-E3	34 mOhm	N-Channel	100 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	150 °C		Surface Mount	PowerPAK® SO-8	10 V	6 V	1.9 W	30 nC	4 V		20 V	5 A
Vishay Dale SI7454DP-T1-GE3	34 mOhm	N-Channel	100 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	150 °C		Surface Mount	PowerPAK® SO-8	10 V	6 V	1.9 W	30 nC	4 V		20 V	5 A

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