Specification	SI3437DV-T1-E3

Current - Continuous Drain (Id) (Tc)	1.4 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	510 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	2 W, 3.2 W
Rds On (Max)	750 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SI3437 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max)	Package Name	Gate Charge (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
Vishay Dale SI3437DV-T1-GE3	-55 °C	150 °C	Surface Mount	20 V	6-TSOP	19 nC	150 V	P-Channel	MOSFET (Metal Oxide)	4 V	510 pF	SOT-23-6 Thin TSOT-23-6	1.4 A	750 mOhm	2 W 3.2 W	6 V	10 V
Vishay Dale SI3437DV-T1-E3	-55 °C	150 °C	Surface Mount	20 V	6-TSOP	19 nC	150 V	P-Channel	MOSFET (Metal Oxide)	4 V	510 pF	SOT-23-6 Thin TSOT-23-6	1.4 A	750 mOhm	2 W 3.2 W	6 V	10 V

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