IPTG111N20NM3FDATMA1
UnknownTHE OPTIMOS™ POWER MOSFET IPTG111N20NM3FD COMES IN THE IMPROVED TO-LEADED PACKAGE WITH GULLWING LEADS.
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IPTG111N20NM3FDATMA1
UnknownTHE OPTIMOS™ POWER MOSFET IPTG111N20NM3FD COMES IN THE IMPROVED TO-LEADED PACKAGE WITH GULLWING LEADS.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPTG111N20NM3FDATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.8 A, 108 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSMD, Gull Wing |
| Power Dissipation (Max) | 375 W, 3.8 W |
| Rds On (Max) @ Id, Vgs | 11.1 mOhm |
| Supplier Device Package | PG-HSOG-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPTG111N Series
The OptiMOS™ power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless,TOLGallows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 3 - 200 V offers very low RDS(on)and is optimized to handle high current. Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701). Among the key benefits, TOLG ensures high efficiency, lower EMI as well as high power density.