Description
General part information
BFP840 Series
The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BFP840FESDH6327XTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 0.035 mA |
| DC Current Gain (hFE) (Min) | 150 |
| Frequency - Transition | 85 GHz |
| Gain | 35 dB |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) | 0.75 dB |
| Operating Temperature | 150 °C |
| Package / Case | 4-SMD, Flat Leads |
| Package Name | PG-TSFP-4-1 |
| Power - Max | 75 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.6 V |
Pricing
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CAD
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Documents
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