CY15V104QSN-108SXI is a 4Mb EXCELON™ ultra ferroelectric RAM (F-RAM). This is a high-performance, 4Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories. Unlike serial flash, the CY15x104QSN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. The CY15x104QSN is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.