Specification	SIZ998BDT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	23.7 A
Current - Continuous Drain (Id) (Ta) (2)	36.2 A
Current - Continuous Drain (Id) (Tc)	54.8 A
Current - Continuous Drain (Id) (Tc) (2)	94.6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	18 nC, 46.7 nC
Input Capacitance (Ciss) (Max)	2130 pF, 790 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	6 mm
Package Name	8-PowerPair®
Package Width	5 mm
Power - Max (Ta)	3.8 W, 4.8 W
Power - Max (Tc)	32.9 W, 20 W
Rds On (Max)	4.39 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V

SIZ998 Series

Part	Power - Max (Value 2)	Power - Max (Value 1)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package Name	Package Width	Package Length	Gate Charge (Max)	Configuration - Features	Configuration	Channel Count	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Ta) (2)	Power - Max (Tc)	Power - Max (Ta)
Vishay Dale SIZ998DT-T1-GE3	32.9 W	20.2 W	-55 °C	150 °C	2.8 mOhm 6.7 mOhm	8-PowerWDFN	MOSFET (Metal Oxide)	930 pF 2620 pF	30 V	20 A	Surface Mount	8-PowerPair®	5 mm	6 mm	8.1 nC	Dual	N-Channel	2	2.2 V
Vishay Dale SIZ998BDT-T1-GE3			-55 °C	150 °C	4.39 mOhm	8-PowerWDFN	MOSFET (Metal Oxide)	790 pF 2130 pF	30 V	54.8 A	Surface Mount	8-PowerPair®	5 mm	6 mm	18 nC 46.7 nC	Dual	N-Channel	2	2.2 V	94.6 A	23.7 A	36.2 A	20 W 32.9 W	3.8 W 4.8 W

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