Specification	SQ2308CES-T1_BE3

Current - Continuous Drain (Id) (Tc)	2.3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	5.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	205 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQ2308 Series

Part	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs(th) (Max)	Qualification	Power Dissipation (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Technology
Vishay Dale SQ2308CES-T1_BE3	60 V	5.3 nC	SOT-23-3 (TO-236)	20 V	2.3 A	10 V	4.5 V	Automotive	-55 °C	175 °C	150 mOhm	2.5 V	AEC-Q101	2 W	N-Channel	Surface Mount	205 pF	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)
Vishay Dale SQ2308CES-T1_GE3	60 V	5.3 nC	SOT-23-3 (TO-236)	20 V	2.3 A	10 V	4.5 V	Automotive	-55 °C	175 °C	150 mOhm	2.5 V	AEC-Q101	2 W	N-Channel	Surface Mount	205 pF	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)

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