Specification	GB10SLT12-252

Capacitance	520 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	250 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252
Reverse Recovery Time (trr)	0 ns
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V

GB10SLT12 Series

Part	Capacitance	Package Name	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Maximum)	Diode Pair Count	Diode Configuration
GeneSiC Semiconductor GB10SLT12-252	520 pF	TO-252	250 µA	1200 V	10 A	SiC (Silicon Carbide) Schottky	175 °C	-55 °C	Surface Mount	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3
GeneSiC Semiconductor GB10SLT12-252	520 pF	TO-252	250 µA	1200 V	10 A	SiC (Silicon Carbide) Schottky	175 °C	-55 °C	Surface Mount	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 mA	No Recovery Time	500 mA 500 mA
GeneSiC Semiconductor GB10SLT12-220	520 pF	TO-220-2	40 µA	1200 V	10 A	SiC (Silicon Carbide) Schottky	175 °C	-55 °C	Through Hole	0 ns	TO-220-2	500 mA	No Recovery Time	500 mA 500 mA	1.8 V
GeneSiC Semiconductor GB10SLT12-247D		TO-247	50 µA	1200 V		SiC (Silicon Carbide) Schottky	175 °C	-55 °C	Through Hole		TO-247-3	200 mA			1.9 V	12 A	500 ns	1 pair	Common Cathode
GeneSiC Semiconductor GB10SLT12-220	520 pF	TO-220-2	40 µA	1200 V	10 A	SiC (Silicon Carbide) Schottky	175 °C	-55 °C	Through Hole	0 ns	TO-220-2				1.8 V
GeneSiC Semiconductor GB10SLT12-247D		TO-247	50 µA	1200 V		SiC (Silicon Carbide) Schottky	175 °C	-55 °C	Through Hole		TO-247-3	200 mA			1.9 V	12 A	500 ns	1 pair	Common Cathode

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