Specification	C2M0080170P

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	120 nC, 120 nC
Input Capacitance (Ciss) (Max)	2250 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4L
Power Dissipation (Max)	277 W
Rds On (Max)	125 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

C2M0080170 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Package Name	Mounting Type	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Vgs(th) (Max)
Wolfspeed, Inc. C2M0080170P	-55 °C	150 °C	277 W	SiCFET (Silicon Carbide)	1700 V	-10 V	25 V	125 mOhm	TO-247-4L	Through Hole	120 nC 120 nC	2250 pF	20 V	40 A	TO-247-4	N-Channel	4 V

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