Specification	SI2302ADS-T1-E3

Current - Continuous Drain (Id) (Ta)	2.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	10 nC
Input Capacitance (Ciss) (Max)	300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	700 mW
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.2 V

SI2302 Series

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Package Name	Rds On (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Vgs (Max)	Technology	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI2302ADS-T1-GE3	2.5 V	4.5 V	20 V	-55 °C	150 °C	Surface Mount	N-Channel	SOT-23-3 (TO-236)	60 mOhm	10 nC	300 pF	1.2 V	8 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	700 mW	2.1 A
Vishay Dale SI2302ADS-T1-E3	2.5 V	4.5 V	20 V	-55 °C	150 °C	Surface Mount	N-Channel	SOT-23-3 (TO-236)	60 mOhm	10 nC	300 pF	1.2 V	8 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	700 mW	2.1 A
Vishay Dale SI2302ADS-T1	2.5 V	4.5 V	20 V	-55 °C	150 °C	Surface Mount	N-Channel	SOT-23-3 (TO-236)	60 mOhm	10 nC	300 pF	1.2 V	8 V	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	700 mW	2.1 A

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