Specification	PJS6604_S2_00001

Configuration	P-Channel Complementary, N
Current - Continuous Drain (Id) (Ta)	4.4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	11 nC, 11.3 nC
Input Capacitance (Ciss) (Max)	443 pF, 447 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-23-6
Package Name	SOT-23-6
Power - Max (Ta)	1.25 W
Rds On (Max)	48 mOhm, 98 mOhm, 98 mOhm, 10 V, 48 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.3 V, 1.2 V

NFET-30TLNP Series

Part	Package / Case	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Configuration	Vgs(th) (Max)	Power - Max (Ta)	Mounting Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	Current - Continuous Drain (Id) (Ta)
Panjit International Inc. PJS6603_S2_00001	SOT-23-6	5.8 nC 9.8 nC	-55 °C	150 °C	SOT-23-6	N P-Channel Complementary	2.1 V	1.25 W	Surface Mount	235 pF 396 pF	30 V	MOSFET (Metal Oxide)	48 mOhm	4.4 A
Panjit International Inc. PJS6604_S2_00001	SOT-23-6	11 nC 11.3 nC	-55 °C	150 °C	SOT-23-6	N P-Channel Complementary	1.2 V 1.3 V	1.25 W	Surface Mount	443 pF 447 pF	30 V	MOSFET (Metal Oxide)	10 V 48 mOhm 48 mOhm 98 mOhm 98 mOhm	4.4 A

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