MMIX1F420N10T

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IXYS

MOSFET N-CH 100V 334A 24SMPD

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IXYS

MOSFET N-CH 100V 334A 24SMPD

Technical Specifications

Parameters and characteristics for this part

Specification	MMIX1F420N10T

Current - Continuous Drain (Id) @ 25°C	334 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	670 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	24-PowerSMD, 21 Leads
Power Dissipation (Max) [Max]	680 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	24-SMPD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
IXYS MMIX1F420N10T	Surface Mount	MOSFET (Metal Oxide)	N-Channel	10 V	2.6 mOhm	4700 pF	670 nC	-55 °C	175 ░C	20 V	680 W	24-SMPD	334 A	24-PowerSMD 21 Leads	100 V	5 V

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General part information

N-Channel 100 V 334A (Tc) 680W (Tc) Surface Mount 24-SMPD

Technical documentation and resources

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