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STW11NK100Z - TO-247-3 HiP

STW11NK100Z

Active
STMicroelectronics

N-CHANNEL 1000 V, 1.10 OHM TYP. 8.3 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

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Search across all available documentation for this part.

DocumentsTN1156+15
STW11NK100Z - TO-247-3 HiP

STW11NK100Z

Active
STMicroelectronics

N-CHANNEL 1000 V, 1.10 OHM TYP. 8.3 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsTN1156+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW11NK100Z
Current - Continuous Drain (Id) @ 25°C8.3 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]162 nC
Input Capacitance (Ciss) (Max) @ Vds3500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]230 W
Rds On (Max) @ Id, Vgs1.38 Ohm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.43
30$ 5.09
120$ 4.37
510$ 3.88
1020$ 3.32
2010$ 3.13
NewarkEach 1$ 6.24
10$ 5.53
25$ 4.83
50$ 4.48
100$ 3.90

Description

General part information

STW11NK100Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.