Specification	IPB120N06N G

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	62 nC
Input Capacitance (Ciss) (Max)	2100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	158 W
Rds On (Max)	11.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPB120N Series

Part	Mounting Type	Package Name	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) (Tc)	FET Type	Technology	Grade	Qualification
INFINEON IPB120N06N G	Surface Mount	PG-TO263-3	62 nC	20 V	158 W	60 V	-55 °C	175 °C	2100 pF	4 V	11.7 mOhm	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 A	N-Channel	MOSFET (Metal Oxide)
INFINEON IPB120N06S4H1ATMA1	Surface Mount	PG-TO263-3-2	270 nC	20 V	250 W	60 V	-55 °C	175 °C	21900 pF	4 V	2.1 mOhm	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 A	N-Channel	MOSFET (Metal Oxide)	Automotive	AEC-Q101
INFINEON IPB120N06S402ATMA1	Surface Mount	PG-TO263-3-2	195 nC	20 V	188 W	60 V	-55 °C	175 °C	15750 pF	4 V	2.4 mOhm	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 A	N-Channel	MOSFET (Metal Oxide)	Automotive	AEC-Q101

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