
1SS389,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 10 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)

1SS389,L3F
ActiveToshiba Semiconductor and Storage
DIODES, 10 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)
Description
General part information
1SS389 Series
DIODES, 10 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)
Technical Specifications
Parameters and characteristics for this part
| Specification | 1SS389,L3F |
|---|---|
| Capacitance | 40 pF |
| Current - Average Rectified (Io) | 100 mA |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | SOD-523, SC-79 |
| Package Name | ESC |
| Speed | Any Speed, Small Signal |
| Speed - Fast Recovery (Maximum) | 200 mA |
| Speed - Small Signal Current Max | 200 mA, 200 mA, 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 10 V |
| Voltage - Forward (Vf) (Max) | 500 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
Surface Mount Small Signal Diode Precautions for use
Basics of Diodes (Power Losses and Thermal Design)
Selection Guide Small Signal 2025 Rev1.0
Basics of Diodes (Types and Overview of Diodes)
1SS389 Data sheet/Japanese
Mini catalog Introduction of Toshiba diode lineup for Industries
Mini catalog Toshiba's circuit protection solutions and switch solutions
1SS389 Data sheet/English