Specification	HN1A01FU-GR,LF

Current - Collector (Ic) (Max)	0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
Operating Temperature	125 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	US6
PNP Count	2
Power - Max	200 mW
Transistor Configuration	Dual
Transistor Type	PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

HN1A01FU Series

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-363(US6)

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	PNP Count	Transistor Type	Mounting Type	Frequency - Transition	Vce Saturation (Max)	Grade	Package Name	Qualification	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min)	Package / Case	Power - Max	Operating Temperature	Transistor Configuration
Toshiba Semiconductor and Storage HN1A01FU-GR,LXHF	50 V	0.15 mA	2	PNP	Surface Mount	80 MHz	300 mV	Automotive	US6	AEC-Q101	100 nA	200	6-TSSOP SC-88 SOT-363	200 mW
Toshiba Semiconductor and Storage HN1A01FU-GR,LF	50 V	0.15 mA	2	PNP	Surface Mount	80 MHz	300 mV		US6		100 nA	200	6-TSSOP SC-88 SOT-363	200 mW	125 °C	Dual
Toshiba Semiconductor and Storage HN1A01FU-Y,LF	50 V	0.15 mA	2	PNP	Surface Mount	80 MHz	300 mV		US6		100 nA	120	6-TSSOP SC-88 SOT-363	200 mW	125 °C	Dual
Toshiba Semiconductor and Storage HN1A01FU-Y,LXHF	50 V	0.15 mA	2	PNP	Surface Mount	80 MHz	300 mV	Automotive	US6	AEC-Q101	100 nA	120	6-TSSOP SC-88 SOT-363	200 mW		Dual