Specification	IPU09N03LA G

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	1642 pF, 1642 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	PG-TO251-3-21
Power Dissipation (Max)	63 W
Rds On (Max)	8.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IPU09N Series

Part	Gate Charge (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Package / Case	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max)
INFINEON IPU09N03LA G	13 nC	PG-TO251-3-21	50 A	MOSFET (Metal Oxide)	10 V	4.5 V	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	1642 pF 1642 pF	25 V	8.8 mOhm	20 V	-55 °C	175 °C	Through Hole	63 W	2 V
INFINEON IPU09N03LB G	13 nC	PG-TO251-3-21	50 A	MOSFET (Metal Oxide)	10 V	4.5 V	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	1600 pF	30 V	9.3 mOhm	20 V	-55 °C	175 °C	Through Hole	58 W	2 V

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