
IDP18E120XKSA1
ActiveInfineon Technologies
1200 V, 18 A SINGLE EMITTER CONTROLLED POWER SILICON DIODES IN A TO-220 REAL 2-PIN PACKAGE
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DocumentsTechnical Data Sheet EN

IDP18E120XKSA1
ActiveInfineon Technologies
1200 V, 18 A SINGLE EMITTER CONTROLLED POWER SILICON DIODES IN A TO-220 REAL 2-PIN PACKAGE
Deep-Dive with AI
DocumentsTechnical Data Sheet EN
Technical Specifications
Parameters and characteristics for this part
| Specification | IDP18E120XKSA1 |
|---|---|
| Current - Average Rectified (Io) | 31 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 195 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | PG-TO220-2-2 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 2.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDP18E120 Series
The 1200 V, 18 A emitter controlledsilicon power diodein a TO-220 Real 2-leg package displays excellent softness and VF behaviour and is qualified with a Tj(max)of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.
Documents
Technical documentation and resources