Zenode.ai Logo
Beta
K
IDP18E120XKSA1 - RURP1560-F085

IDP18E120XKSA1

Active
Infineon Technologies

1200 V, 18 A SINGLE EMITTER CONTROLLED POWER SILICON DIODES IN A TO-220 REAL 2-PIN PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

IDP18E120XKSA1 - RURP1560-F085

IDP18E120XKSA1

Active
Infineon Technologies

1200 V, 18 A SINGLE EMITTER CONTROLLED POWER SILICON DIODES IN A TO-220 REAL 2-PIN PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIDP18E120XKSA1
Current - Average Rectified (Io)31 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)195 ns
Speed200 mA, 500 ns
Supplier Device PackagePG-TO220-2-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If2.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.07
10$ 0.90
100$ 0.88
500$ 0.85
DigikeyTube 1$ 1.67
50$ 1.34
100$ 1.10
500$ 1.00
NewarkEach 1$ 2.64
10$ 2.17
100$ 1.40
500$ 1.26
1000$ 0.97
2500$ 0.96
5000$ 0.95

Description

General part information

IDP18E120 Series

The 1200 V, 18 A emitter controlledsilicon power diodein a TO-220 Real 2-leg package displays excellent softness and VF behaviour and is qualified with a Tj(max)of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Documents

Technical documentation and resources