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MJD41CJ

MJD41CJ

Active
Nexperia USA Inc.

100 V, 6 A NPN HIGH POWER BIPOLAR TRANSISTOR

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MJD41CJ

MJD41CJ

Active
Nexperia USA Inc.

100 V, 6 A NPN HIGH POWER BIPOLAR TRANSISTOR

Find alt

Description

General part information

MJD41C Series

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD41CJ
Current - Collector (Ic) (Max)6 A
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)30
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max1.6 W
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

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CAD

3D models and CAD resources for this part