
MJD41CJ
ActiveNexperia USA Inc.
100 V, 6 A NPN HIGH POWER BIPOLAR TRANSISTOR

MJD41CJ
ActiveNexperia USA Inc.
100 V, 6 A NPN HIGH POWER BIPOLAR TRANSISTOR
Description
General part information
MJD41C Series
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD41CJ |
|---|---|
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 30 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 1.6 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part