PSMN9R1-30YL,115
UnknownNexperia USA Inc.
N-CHANNEL 9.1 MΩ 30 V TRENCHMOS LOGIC LEVEL FET IN LFPAK
PSMN9R1-30YL,115
UnknownNexperia USA Inc.
N-CHANNEL 9.1 MΩ 30 V TRENCHMOS LOGIC LEVEL FET IN LFPAK
Description
General part information
PSMN9R1 Series
N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN9R1-30YL,115 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 57 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 16.7 nC |
| Input Capacitance (Ciss) (Max) | 894 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 52 W |
| Rds On (Max) | 9.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.15 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
LFPAK MOSFET thermal design guide, Chinese version
Understanding power MOSFET data sheet parameters
Using power MOSFETs in parallel
PSMN9R1-30YL Quality document
RC Thermal Models
Failure signature of Electrical Overstress on Power MOSFETs
Understanding power MOSFET data sheet parameters
plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body
Wave soldering profile
Using Power MOSFET Zth Curves
Questions about package outline drawings
Reflow soldering profile
Nexperia package poster
LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation
Power MOSFET frequently asked questions and answers
plastic, single-ended surface-mounted package; 4 terminals
Designing RC Snubbers
Power MOSFET single-shot and repetitive avalanche ruggedness rating
LFPAK MOSFET thermal design guide - Part 2