STTA806G

Obsolete

STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

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Obsolete

STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STTA806G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	52 ns
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Operating Temperature - Junction	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package
STMicroelectronics STTA806G	100 µA	Surface Mount	200 mA 500 ns	150 °C	Standard	1.75 V	8 A	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	52 ns	D2PAK
STMicroelectronics STTA806D	100 µA	Through Hole	200 mA 500 ns	150 °C	Standard	1.75 V	8 A	600 V	TO-220-2	52 ns	TO-220AC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Surface Mount D2PAK

Technical documentation and resources