Specification	IPI90N06S4L04AKSA2

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	13000 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	PG-TO262-3-1
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max)	3.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

IPI90N06 Series

Part	Drain to Source Voltage (Vdss)	Technology	Package Name	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max)	Qualification	Grade	Rds On (Max)	Gate Charge (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Vgs (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
INFINEON IPI90N06S4L04AKSA2	60 V	MOSFET (Metal Oxide)	PG-TO262-3-1	150 W	N-Channel	13000 pF	AEC-Q101	Automotive	3.7 mOhm	170 nC	Through Hole	10 V	4.5 V	I2PAK TO-262-3 Long Leads TO-262AA	16 V	2.2 V	-55 °C	175 °C	90 A

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