AIHD03N60RFATMA1

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Infineon Technologies

IC DISCRETE 600V TO252-3

Search across all available documentation for this part.

Unknown

Infineon Technologies

IC DISCRETE 600V TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	AIHD03N60RFATMA1

Current - Collector (Ic) (Max)	5 A
Current - Collector Pulsed (Icm)	7.5 A
Gate Charge	17.1 nC
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	53.6 W
Supplier Device Package	PG-TO252-3-313
Switching Energy	40 µJ, 50 µJ
Td (on/off) @ 25°C	10 ns
Td (on/off) @ 25°C	128 ns
Test Condition	2.5 A, 68 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Package / Case	Power - Max [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	IGBT Type	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C
Infineon Technologies AIHD03N60RFATMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	53.6 W	PG-TO252-3-313	2.5 V	2.5 A 15 V 68 Ohm 400 V	-40 C	175 °C	Surface Mount	600 V	17.1 nC	Trench Field Stop	5 A	7.5 A	40 µJ 50 µJ	10 ns	128 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench Field Stop 600 V 5 A 53.6 W Surface Mount PG-TO252-3-313

Technical documentation and resources

No documents available