BUK7Y9R9-80EX

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Nexperia USA Inc.

TRANS MOSFET N-CH 80V 89A AUTOMOTIVE AEC-Q101 5-PIN(4+TAB) LFPAK T/R

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BUK7Y9R9-80EX

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Nexperia USA Inc.

TRANS MOSFET N-CH 80V 89A AUTOMOTIVE AEC-Q101 5-PIN(4+TAB) LFPAK T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK7Y9 Series

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y9R9-80EX

Current - Continuous Drain (Id) (Tc)	89 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	51.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4266 pF, 498 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	195 W
Qualification	AEC-Q101
Rds On (Max)	9.9 mOhm, 98 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

BUK7Y9 Series

N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56

Part	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Grade	Input Capacitance (Ciss) (Max)	Mounting Type	Gate Charge (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package Name	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case
Nexperia USA Inc. BUK7Y9R9-80EX	AEC-Q101	10 V	195 W	Automotive	498 pF 4266 pF	Surface Mount	51.6 nC	20 V	89 A	9.9 mOhm 98 mOhm	LFPAK56 Power-SO8	4 V	80 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 °C	SC-100 SOT-669