
HMC8410LP2FE
Active0.01 GHZ TO 10 GHZ, GAAS, PHEMT, MMIC, LOW NOISE AMPLIFIER

HMC8410LP2FE
Active0.01 GHZ TO 10 GHZ, GAAS, PHEMT, MMIC, LOW NOISE AMPLIFIER
Description
General part information
HMC8410 Series
The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT)of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.Multifunction pin names can be referenced by their relevant function only.ApplicationsSoftware defined radiosElectronics warfareRadar applications
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8410LP2FE |
|---|---|
| Current - Supply | 65 mA |
| Frequency (Max) | 10 GHz |
| Frequency (Min) | 10 MHz |
| Gain | 19.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 1.1 dB |
| P1dB | 21 dBm |
| Package / Case | CSP, 6-VDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-LFCSP |
| Package Width | 2 mm |
| RF Type | Radar |
| Voltage - Supply | 5 VDC |
Pricing
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